TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications 2SC5201 Unit: mm • High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter volta.
maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 http://store.iiic.cc/ 2009-12-21 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Symbol ICBO IEBO VCEO hFE (1) hFE (2) VCE.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5200 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
2 | 2SC5200 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR | |
3 | 2SC5200 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
4 | 2SC5200 |
Thinki Semiconductor |
150 Watt Silicon NPN Power Transistors | |
5 | 2SC5200 |
ON Semiconductor |
NPN Transistor | |
6 | 2SC5200 |
STMicroelectronics |
NPN Transistor | |
7 | 2SC5200 |
INCHANGE |
NPN Transistor | |
8 | 2SC5200A |
JILIN SINO |
Silicon NPN Transistor | |
9 | 2SC5200B |
JILIN SINO |
Silicon NPN Transistor | |
10 | 2SC5200H |
INCHANGE |
NPN Transistor | |
11 | 2SC5200N |
Toshiba |
NPN Transistor | |
12 | 2SC5200N |
INCHANGE |
NPN Transistor |