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Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 1. Applications • Power Amplifiers 2. Features (1) High collector voltage: VCEO = 230 V (min) (2) Complementary to 2SA1943N (3) Recommended for 100-W high-fidelity audio frequency amplifier output stage 3. Packaging and Internal Circuit 2SC5200N 1. Base 2. Collector (Heatsink) 3. Emitter TO-3P(.
(1) High collector voltage: VCEO = 230 V (min) (2) Complementary to 2SA1943N (3) Recommended for 100-W high-fidelity audio frequency amplifier output stage 3. Packaging and Internal Circuit 2SC5200N 1. Base 2. Collector (Heatsink) 3. Emitter TO-3P(N) 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Tc = 25) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current Collector power dissipation (Note 1) VCBO VCEO VEBO IC IB PC 230 V 230 5 15 A 1.5 150 W Junction temperature Stor.
2SC5200N - INCHANGE
·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Compl.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5200 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 2 | 2SC5200 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 3 | 2SC5200 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 4 | 2SC5200 |
Thinki Semiconductor |
150 Watt Silicon NPN Power Transistors |
|
| 5 | 2SC5200 |
ON Semiconductor |
NPN Transistor |
|
| 6 | 2SC5200 |
STMicroelectronics |
NPN Transistor |
|
| 7 | 2SC5200 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SC5200A |
JILIN SINO |
Silicon NPN Transistor |
|
| 9 | 2SC5200B |
JILIN SINO |
Silicon NPN Transistor |
|
| 10 | 2SC5200H |
INCHANGE |
NPN Transistor |
|
| 11 | 2SC5201 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 12 | 2SC5206 |
Hitachi |
Silicon NPN Transistor |
|