Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer .
q q q q q
4.1±0.2 8.0±0.2 Solder Dip
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 900 1000 900 1000 800 7 2 1 0.3 30 2 150
–55 to +150 Unit V
15.0±0.3
3.0±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SC5036 2SC5036A 2SC5036 Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg
13.7
–0.2
+0.5
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC503 |
Toshiba |
Silicon NPN Epitaxial Type Transistor | |
2 | 2SC5030 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
3 | 2SC5032 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
4 | 2SC5034 |
Panasonic Semiconductor |
NPN Transistor | |
5 | 2SC5035 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
6 | 2SC5036A |
Panasonic Semiconductor |
NPN TRANSISTOR | |
7 | 2SC5037 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
8 | 2SC5037A |
Panasonic Semiconductor |
NPN TRANSISTOR | |
9 | 2SC5039 |
ETC |
NPN Transistor | |
10 | 2SC5000 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
11 | 2SC5001 |
ROHM |
NPN 10A 20V Middle Power Transistor | |
12 | 2SC5002 |
Sanken electric |
NPN TRANSISTOR |