2SC5034 - Panasonic Semiconductor

2SC5034 NPN Transistor

Power Transistors 2SC5034 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 s Features 9.9±0.3 φ3.2±0.1 2.9±0.2 q High collector to emitter VCEO q High-speed switching q Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 4.1±0.2 8.0±0.2 Sold.

Features

9.9±0.3 φ3.2±0.1 2.9±0.2 q High collector to emitter VCEO q High-speed switching q Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 4.1±0.2 8.0±0.2 Solder Dip / s Absolute Maximum Ratings (TC=25˚C) 15.0±0.3 3.0±0.2 1.2±0.15 1.45±0.15 2.6±0.1 0.7±0.1 e ) Parameter Symbol Ratings Unit +0.5 13.7
  –0.2 c type Collector to base voltage VCBO 500 V n d tage. ued VCES 500 V s tin Collector to emitter voltage le on VCEO 400 V a elifecyc disc Emitter to base voltage VEBO 7 V n u t ed, Peak collector current ICP 15 A .