: 2SC503 2SC504 I SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. FEATURES • High Transition Frequency : fx=80MHz (Typ.) • High Breakdown Voltage : VCEQ=80V (2SC503) : VCEO=60V (2SC504) . Complementary to 2SA503 and 2SA504. Unit in mm 09.39MAX. 08ASMA1( r 1 X < 5 d ^ I l ^0.45 a II.
• High Transition Frequency : fx=80MHz (Typ.)
• High Breakdown Voltage
: VCEQ=80V (2SC503) : VCEO=60V (2SC504) . Complementary to 2SA503 and 2SA504.
Unit in mm
09.39MAX.
08ASMA1( r 1
X < 5 d
^ I
l
^0.45
a
II
05.08
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base
2SC503
Voltage
2SC504
Collector- Emitter Voltage
2SC503 2SC504
Emitter-Base Voltage Collector Current
Base Current
Collector Power Dissipation
Ta=25°C Tc=25°C
Junction Temperature
Storage Temperature Range
SYMBOL v CBO
V CEO vebo ic IB PC
T i
T Htg
RATING 100 80 80 60
5
600 100 800
6
175 -65^175
UNIT V
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5000 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
2 | 2SC5001 |
ROHM |
NPN 10A 20V Middle Power Transistor | |
3 | 2SC5002 |
Sanken electric |
NPN TRANSISTOR | |
4 | 2SC5002 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC5002 |
INCHANGE |
NPN Transistor | |
6 | 2SC5003 |
Sanken electric |
NPN TRANSISTOR | |
7 | 2SC5003 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SC5004 |
NEC |
NPN TRANSISTOR | |
9 | 2SC5005 |
NEC |
NPN TRANSISTOR | |
10 | 2SC5006 |
NEC |
NPN TRANSISTOR | |
11 | 2SC5006 |
INCHANGE |
NPN Transistor | |
12 | 2SC5006 |
CEL |
NPN Transistor |