2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • • • High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA) High collector power dissipation: .
age DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance mbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob Test Condition VCB = 50 V, IE = 0 VEB = 8 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 4 A IC = 4 A, IB = 40 mA VCE = 2 V, IC = 4 A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Min ― ― 20 800 250 ― ― ― 150 ― 45 Typ. ― 100 ― 100 ― ― 3200 ― ― 0. ― 1. ― 5 2 ― MH ― pF V V z ―V Max Unit nA nA 1 2004-07-26 http://www.Datasheet4U.com 2SC5030 Marking C5030 Part No. (or abbreviation.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC503 |
Toshiba |
Silicon NPN Epitaxial Type Transistor | |
2 | 2SC5032 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
3 | 2SC5034 |
Panasonic Semiconductor |
NPN Transistor | |
4 | 2SC5035 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
5 | 2SC5036 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
6 | 2SC5036A |
Panasonic Semiconductor |
NPN TRANSISTOR | |
7 | 2SC5037 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
8 | 2SC5037A |
Panasonic Semiconductor |
NPN TRANSISTOR | |
9 | 2SC5039 |
ETC |
NPN Transistor | |
10 | 2SC5000 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
11 | 2SC5001 |
ROHM |
NPN 10A 20V Middle Power Transistor | |
12 | 2SC5002 |
Sanken electric |
NPN TRANSISTOR |