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2SC4913 Silicon NPN Triple Diffused Application High voltage amplifier Features • High breakdown voltage • V(BR)CEO = 2000 V min Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SC4913 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector pea.
• High breakdown voltage
• V(BR)CEO = 2000 V min
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3. Emitter
2SC4913
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC I C(peak) PC Tj Tstg Ratings 2000 2000 6 20 40 1.5 150
–55 to +150 Unit V V V mA mA W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector cutoff current Collector cutoff current Emitter cutoff current DC curre.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC4910 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 2 | 2SC4915 |
Toshiba Semiconductor |
NPN Transistor |
|
| 3 | 2SC4916 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC4916 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC4919 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 6 | 2SC4919-S |
Sanyo |
NPN Epitaxial Planar Silicon Transistor |
|
| 7 | 2SC4900 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 8 | 2SC4901 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 9 | 2SC4901 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 10 | 2SC4901 |
Renesas |
Silicon NPN Transistor |
|
| 11 | 2SC4901YK |
INCHANGE |
NPN Transistor |
|
| 12 | 2SC4905 |
Hitachi Semiconductor |
Silicon NPN Bipolar Transistor |
|