·High gain bandwidth product fT = 9 GHz (Typ) @ VCE=5V,IC=20mA,f=0.9GHz ·High gain, low noise figure ︱S21e︱2 = 13.5 dB @ VCE=5V,IC=20mA,f=0.9GHz, NF = 1.6dB( Typ ) @ VCE=5V,IC=5mA, f=0.9GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·UHF / VHF wide band amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL.
kdown Voltage IC= 1uA ; IE= 0 ICBO Collector Cutoff Current VCB= 10V ; IE= 0 IEBO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 5V COB Output Capacitance VCB=10V,IE=0mA, f=1MHz fT Current-Gain—Bandwidth Product VCE=5V,IC=20mA | S21e |2 Power gain VCE=5V,IC=5mA, f=0.9GHz VCE=5V,IC=20mA,f=0.9GHz NF Noise figure VCE=5V, IC=5mA, f=0.9GHz MIN TYP. MAX UNIT 15 V 0.1 uA 0.1 uA 60 150 300 1 pF 7 9 GHz 13.3 dB 13.5 dB 1.6 2.5 dB hFEClassifications A B C D E 60-100 90-140 130-180 170-250 250-300 isc website:www.iscsemi.com 2 isc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC4901 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
2 | 2SC4901 |
Inchange Semiconductor |
Silicon NPN Transistor | |
3 | 2SC4901 |
Renesas |
Silicon NPN Transistor | |
4 | 2SC4900 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
5 | 2SC4905 |
Hitachi Semiconductor |
Silicon NPN Bipolar Transistor | |
6 | 2SC4907 |
Sanken electric |
NPN TRANSISTOR | |
7 | 2SC4907 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SC4907 |
INCHANGE |
NPN Transistor | |
9 | 2SC4908 |
Sanken electric |
NPN TRANSISTOR | |
10 | 2SC4908 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC4909 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
12 | 2SC4910 |
Sanyo Semicon Device |
NPN TRANSISTOR |