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Ordering number:EN4411 NPN Epitaxial Planar Silicon Transistor 2SC4910 VHF-Band Power Amplifier Applications Features · On-chip emitter ballast resistors. Package Dimensions unit:mm 2084B [2SC4910] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector.
· On-chip emitter ballast resistors.
Package Dimensions
unit:mm
2084B
[2SC4910]
4.5
10.5
1.9 1.2
2.6 1.4
1.0 8.5
1.2
1.6 0.5
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
2.5 Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-to-Base Br.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC4913 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 2 | 2SC4915 |
Toshiba Semiconductor |
NPN Transistor |
|
| 3 | 2SC4916 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC4916 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC4919 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 6 | 2SC4919-S |
Sanyo |
NPN Epitaxial Planar Silicon Transistor |
|
| 7 | 2SC4900 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 8 | 2SC4901 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 9 | 2SC4901 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 10 | 2SC4901 |
Renesas |
Silicon NPN Transistor |
|
| 11 | 2SC4901YK |
INCHANGE |
NPN Transistor |
|
| 12 | 2SC4905 |
Hitachi Semiconductor |
Silicon NPN Bipolar Transistor |
|