2SC4901 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4901 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter.
• High gain bandwidth product fT = 9 GHz Typ
• High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz
Outline
CMPAK
3
1 2
1. Emitter 2. Base 3. Collector
2SC4901
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 9 1.5 50 100 150
–55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector cutoff curren.
· High gain bandwidth product fT = 9 GHz (Typ) @ VCE=5V,IC=20mA,f=0.9GHz · High gain, low noise figure ︱S21e︱2 = 13.5 dB.
of circuits, software and other related information in this document are provided only to illustrate the operation of s.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC4900 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
2 | 2SC4901YK |
INCHANGE |
NPN Transistor | |
3 | 2SC4905 |
Hitachi Semiconductor |
Silicon NPN Bipolar Transistor | |
4 | 2SC4907 |
Sanken electric |
NPN TRANSISTOR | |
5 | 2SC4907 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SC4907 |
INCHANGE |
NPN Transistor | |
7 | 2SC4908 |
Sanken electric |
NPN TRANSISTOR | |
8 | 2SC4908 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SC4909 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
10 | 2SC4910 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
11 | 2SC4913 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
12 | 2SC4915 |
Toshiba Semiconductor |
NPN Transistor |