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·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO .
ETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.7A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.7A ICBO Collector Cutoff Current VCB= 800V; IE= 0 ICES Collector Cutoff Current VCE= 1500V; RBE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC current gain IC= 1A; VCE= 5V hFE-2 DC current gain IC= 5A; VCE= 5V Switching times tstg Storage Time tf Fall Time IC= 4A , IB1= 0.8A; IB2= -1.6A RL= 50Ω; VCC= 200V MIN TYP. MAX UNIT 800 V 5.0 V 1.5 V 10 μA 1.0 mA 1..
2SC4770 - Sanyo Semicon Device
Ordering number:EN3666A NPN Triple Diffused Planar Silicon Transistor 2SC4770 Ultrahigh-Definition Color Display Horizo.
2SC4770 - SavantIC
·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed APPLICATIONS ·Ultrahigh-definition color di.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC4774 |
UTC |
HIGH FREQUENCY AMPLIFIER TRANSISTOR |
|
| 2 | 2SC4774 |
Rohm |
Transistor |
|
| 3 | 2SC4702 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 4 | 2SC4702 |
Renesas |
NPN Transistor |
|
| 5 | 2SC4702 |
Kexin |
NPN Transistor |
|
| 6 | 2SC4703 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC4703 |
NEC |
NPN TRANSISTOR |
|
| 8 | 2SC4703 |
CEL |
NPN SILICON RF TRANSISTOR |
|
| 9 | 2SC4704 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 10 | 2SC4705 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 11 | 2SC4705 |
Kexin |
NPN Epitaxial Planar Silicon Transistor |
|
| 12 | 2SC4706 |
INCHANGE |
NPN Transistor |
|