2SC4704 - Hitachi Semiconductor

2SC4704 Silicon NPN Transistor

2SC4704 Silicon NPN Epitaxial High Frequency Amplifier Feature • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier • Complementary pair of 2SA1810 TO-126 MOD Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit —————————————.

Features

ax Unit Test condition ——————————————————————————————————————————— Collector to base breakdown voltage V(BR)CBO 200 — — V IC = 10 µA, IE = 0 ——————————————————————————————————————————— Collector to emitter breakdown voltage V(BR)CEO 200 — — V IC = 1 mA, RBE = ∞ ——————————————————————————————————————————— Emitter to base breakdown voltage V(BR)EBO 4 ——V IE = 10 µA, IC = 0 ——————————————————————————————————————————— Collector cutoff current ICBO — — 10 µA VCB = 160 V, IE = 0 ——————————————————————————————————————————— DC current transfer ratio hFE
*1 60 — 200 VCE = 5 V, IC = .