Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SC4706 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4706 900 600 7 14(Pulse28) 7 130(Tc=25°C) 150 –55to+150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) 2SC4706 100max 100max 600min 10 to 25 0.5max 1.2.
o. b. Lot No.
I C
– V CE Characteristics (Typical)
14
V CE (sat),V BE (sat)
– I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 2 I C /I B =5 Const.
I C
– V BE Temperature Characteristics (Typical)
14 (V CE =4V)
6 1.
12
A
1.2 A
12 Collector Current I C (A)
800mA
Collector Current I C (A) 10
10
600mA
8
400m A
8
emp )
mp) e Te (Cas
1 V B E (sat)
Cas
eT
6
200mA
6
4
4
˚C (
25˚C
125
I B =100mA
2
2 V C E (sat) 0 0.02 0.05 0.1 0.5 1 5 10 0 0 0.2 0.4 0.6
0
0
1
2
3
4
0.8
–55˚.
2SC4706 - SavantIC
·With TO-3PN package ·High voltage switching transistor APPLICATIONS ·For switching regulator and general purpose applic.
2SC4706 - INCHANGE
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC4702 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 2 | 2SC4702 |
Renesas |
NPN Transistor |
|
| 3 | 2SC4702 |
Kexin |
NPN Transistor |
|
| 4 | 2SC4703 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC4703 |
NEC |
NPN TRANSISTOR |
|
| 6 | 2SC4703 |
CEL |
NPN SILICON RF TRANSISTOR |
|
| 7 | 2SC4704 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SC4705 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 9 | 2SC4705 |
Kexin |
NPN Epitaxial Planar Silicon Transistor |
|
| 10 | 2SC4707 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 11 | 2SC4709 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 12 | 2SC4710 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|