Ordering number:EN3484 NPN Epitaxial Planar Silicon Transistor 2SC4705 Low-Frequency General-Purpose Amplifier, Applications (High hFE) Applications · Low-frequency general-purpose amplifier, drivers, muting circuits. Features · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage : VCE(sat)≤0.5V max. · High VEBO : VEBO≥15V.
· High DC current gain (hFE=800 to 3200).
· Low collector-to-emitter saturation voltage :
VCE(sat)≤0.5V max.
· High VEBO : VEBO≥15V.
· Small size making it easy to provide high-density,
hybrid ICs.
Package Dimensions
unit:mm 2038A
[2SC4705]
4.5 1.6
0.4 0.5
32 1.5
1
3.0
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Condition.
SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC4705 Features High DC current gain (hFE=800 to 3200). .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC4702 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
2 | 2SC4702 |
Renesas |
NPN Transistor | |
3 | 2SC4702 |
Kexin |
NPN Transistor | |
4 | 2SC4703 |
INCHANGE |
NPN Transistor | |
5 | 2SC4703 |
NEC |
NPN TRANSISTOR | |
6 | 2SC4703 |
CEL |
NPN SILICON RF TRANSISTOR | |
7 | 2SC4704 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
8 | 2SC4706 |
INCHANGE |
NPN Transistor | |
9 | 2SC4706 |
Sanken electric |
NPN TRANSISTOR | |
10 | 2SC4706 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC4707 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
12 | 2SC4709 |
Sanyo Semicon Device |
NPN TRANSISTOR |