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Transistor 2SC4755 Silicon NPN epitaxial planer type For high speed switching Unit: mm 2.1±0.1 s Features q q q 0.425 1.25±0.1 0.425 High-speed switching. Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.
q q q
0.425
1.25±0.1
0.425
High-speed switching. Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
0.9±0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCES VEBO ICP IC PC Tj Tstg
Ratings 25 20 5 300 200 150 150
–55 ~ +150
Unit V V V mA mA mW ˚C ˚C
.
2SC4755 - Guangdong Kexin
SMD Type Silicon NPN Epitaxial Planar Type 2SC4755 Transistors IC Features High-speed switching. Low collector to emit.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC4754 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 2 | 2SC4757 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | 2SC4758 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | 2SC4759 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | 2SC4702 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 6 | 2SC4702 |
Renesas |
NPN Transistor |
|
| 7 | 2SC4702 |
Kexin |
NPN Transistor |
|
| 8 | 2SC4703 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC4703 |
NEC |
NPN TRANSISTOR |
|
| 10 | 2SC4703 |
CEL |
NPN SILICON RF TRANSISTOR |
|
| 11 | 2SC4704 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SC4705 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|