2SC4757 - Inchange Semiconductor

2SC4757 Silicon NPN Power Transistor

·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .

Features

less otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.2A ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC= 5A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1.0MHz Switching times Resistive load tstg Sto.