Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification 4.0±0.2 3.0±0.2 Unit: mm s Features q q q Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. (Ta=25˚C) 1 2 3 Parameter Collector to base voltage Collector .
q q q
Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob.
(Ta=25˚C)
1 2 3
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 150 150 5 100 50 300 150
–55 ~ +150
Unit V V V mA mA mW ˚C ˚C
1:Emitter 2:Collector 3:Base EIAJ:SC
–72 New S Type Package
1.27 1.27 2.54±0.15
s Electrical Characteristics
Parameter Co.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC4710 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
2 | 2SC4713K |
Rohm |
Transistor | |
3 | 2SC4714 |
Panasonic |
NPN Transistor | |
4 | 2SC4702 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
5 | 2SC4702 |
Renesas |
NPN Transistor | |
6 | 2SC4702 |
Kexin |
NPN Transistor | |
7 | 2SC4703 |
INCHANGE |
NPN Transistor | |
8 | 2SC4703 |
NEC |
NPN TRANSISTOR | |
9 | 2SC4703 |
CEL |
NPN SILICON RF TRANSISTOR | |
10 | 2SC4704 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
11 | 2SC4705 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
12 | 2SC4705 |
Kexin |
NPN Epitaxial Planar Silicon Transistor |