High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Features 1) Very low output-on resistance (Ron). 2) Low capacitance. Dimensions (Unit : mm) 2SC4774 2.0 0.3 (3) 0.9 0.2 0.7 1.25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature.
1) Very low output-on resistance (Ron). 2) Low capacitance.
Dimensions (Unit : mm)
2SC4774
2.0 0.3
(3)
0.9 0.2 0.7
1.25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Limits 12 6 3 50 0.2 150 −55 to +150
Unit V V V mA W °C °C
(2)
(1)
2.1
Absolute maximum ratings (Ta=25C)
0.65 0.65 1.3
0.15
Each lead has same dimensions
ROHM : UMT3 EIAJ : SC-70
(1) Emitter (2) Base (3) Collector
2SC4713K
Packaging specifications and hFE
T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC4710 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
2 | 2SC4714 |
Panasonic |
NPN Transistor | |
3 | 2SC4715 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
4 | 2SC4702 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
5 | 2SC4702 |
Renesas |
NPN Transistor | |
6 | 2SC4702 |
Kexin |
NPN Transistor | |
7 | 2SC4703 |
INCHANGE |
NPN Transistor | |
8 | 2SC4703 |
NEC |
NPN TRANSISTOR | |
9 | 2SC4703 |
CEL |
NPN SILICON RF TRANSISTOR | |
10 | 2SC4704 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
11 | 2SC4705 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
12 | 2SC4705 |
Kexin |
NPN Epitaxial Planar Silicon Transistor |