Ordering number:EN3687 NPN Triple Diffused Planar Silicon Transistor 2SC4709 High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEO min=2100V). · Small Cob (Cob typ=1.3pF). · Wide ASO. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC4709] 10.2 3.6 5.1 2.7 6.3 4.5 1.3 18.0 5..
· High breakdown voltage (VCEO min=2100V).
· Small Cob (Cob typ=1.3pF).
· Wide ASO.
· High reliability (Adoption of HVP process).
Package Dimensions
unit:mm 2010C
[2SC4709]
10.2 3.6 5.1 2.7 6.3 4.5 1.3
18.0
5.6
1.2
14.0
15.1
0.8
0.4
1
2
3 2.7
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
2.55
2.55
1 : Base 2 : Collector 3 : Emitt.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC4702 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
2 | 2SC4702 |
Renesas |
NPN Transistor | |
3 | 2SC4702 |
Kexin |
NPN Transistor | |
4 | 2SC4703 |
INCHANGE |
NPN Transistor | |
5 | 2SC4703 |
NEC |
NPN TRANSISTOR | |
6 | 2SC4703 |
CEL |
NPN SILICON RF TRANSISTOR | |
7 | 2SC4704 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
8 | 2SC4705 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
9 | 2SC4705 |
Kexin |
NPN Epitaxial Planar Silicon Transistor | |
10 | 2SC4706 |
INCHANGE |
NPN Transistor | |
11 | 2SC4706 |
Sanken electric |
NPN TRANSISTOR | |
12 | 2SC4706 |
SavantIC |
SILICON POWER TRANSISTOR |