·With TO-220C package ·High breakdown voltage and high reliability ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·400V/7A switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collect.
ter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=5mA ; RBE=: IC=1mA ; IE=0 IE=1mA ; IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=400V ;IE=0 VEB=5V; IC=0 IC=0.8A ; VCE=5V IC=4A ; VCE=5V IC=10mA ; VCE=5V IC=0.8A ; VCE=10V f=1MHz ; VCB=10V 15 10 10 20 80 MIN 400 500 7 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB 2SC4106 TYP. MAX UNIT V V V 0.8 1.5 10 10 5.
Ordering number:EN2471A NPN Triple Diffused Planar Silicon Transistor 2SC4106 400V/7A Switching Regulator Applications .
·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 400V(Min.) ·High Switching Speed ·Wide Area of Safe Operation ·Min.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC4100 |
ROHM |
NPN Silicon Transistor | |
2 | 2SC4102 |
GME |
Silicon Transistor | |
3 | 2SC4102 |
Rohm |
High-voltage Amplifier Transistor | |
4 | 2SC4102 |
Kexin |
High-voltage Amplifier Transistor | |
5 | 2SC4102 |
Jin Yu Semiconductor |
TRANSISTOR | |
6 | 2SC4102W |
Galaxy Semi-Conductor |
Silicon Epitaxial Planar Transistor | |
7 | 2SC4104 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
8 | 2SC4104 |
Kexin |
NPN Epitaxial Planar Silicon Transistor | |
9 | 2SC4105 |
INCHANGE |
NPN Transistor | |
10 | 2SC4105 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
11 | 2SC4105 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SC4107 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |