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BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z Excellent hFE linearity. Power dissipation:PCM=200mW Production specification 2SC4102W Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No. 2SC4102W Marking CP/CQ/CR Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise s.
z z Excellent hFE linearity. Power dissipation:PCM=200mW Production specification 2SC4102W Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No. 2SC4102W Marking CP/CQ/CR Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 120 120 5 50 200 -55~150 Units V V V mA mW ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless o.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC4102 |
GME |
Silicon Transistor |
|
| 2 | 2SC4102 |
Rohm |
High-voltage Amplifier Transistor |
|
| 3 | 2SC4102 |
Kexin |
High-voltage Amplifier Transistor |
|
| 4 | 2SC4102 |
Jin Yu Semiconductor |
TRANSISTOR |
|
| 5 | 2SC4100 |
ROHM |
NPN Silicon Transistor |
|
| 6 | 2SC4104 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 7 | 2SC4104 |
Kexin |
NPN Epitaxial Planar Silicon Transistor |
|
| 8 | 2SC4105 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC4105 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 10 | 2SC4105 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SC4106 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 12 | 2SC4106 |
INCHANGE |
NPN Transistor |
|