SMD Type Transistors IC NPN Epitaxial Planar Silicon Transistor 2SC4104 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 High fT. Small reverse transfer capacitance. Adoption of FBET process. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings T.
2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Icp PC Tj Tstg Rating 70 60 4 50 100 200 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Base-collector time constant Output capacitance Reverse transfer c.
Ordering number:EN3172 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1580/2SC4104 High-Definition CRT Display Applica.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC4100 |
ROHM |
NPN Silicon Transistor | |
2 | 2SC4102 |
GME |
Silicon Transistor | |
3 | 2SC4102 |
Rohm |
High-voltage Amplifier Transistor | |
4 | 2SC4102 |
Kexin |
High-voltage Amplifier Transistor | |
5 | 2SC4102 |
Jin Yu Semiconductor |
TRANSISTOR | |
6 | 2SC4102W |
Galaxy Semi-Conductor |
Silicon Epitaxial Planar Transistor | |
7 | 2SC4105 |
INCHANGE |
NPN Transistor | |
8 | 2SC4105 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
9 | 2SC4105 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SC4106 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
11 | 2SC4106 |
INCHANGE |
NPN Transistor | |
12 | 2SC4106 |
SavantIC |
SILICON POWER TRANSISTOR |