2SC4102 / 2SC3906K High-voltage Amplifier Transistor (120V, 50mA) Datasheet Parameter VCEO IC Value 120V 50mA lFeatures 1)High breakdown voltage. (BVCEO=120V) 2)Complements the 2SA1579/2SA1514K. lOutline SOT-323 SOT-346 2SC4102 (UMT3) 2SC3906K (SMT3) lInner circuit lApplication HIGH-VOLTAGE AMPLIFIER lPackaging sp.
1)High breakdown voltage. (BVCEO=120V) 2)Complements the 2SA1579/2SA1514K. lOutline SOT-323 SOT-346 2SC4102 (UMT3) 2SC3906K (SMT3) lInner circuit lApplication HIGH-VOLTAGE AMPLIFIER lPackaging specifications Part No. Package Package size 2SC4102 2SC3906K SOT-323 (UMT3) SOT-346 (SMT3) 2021 2928 Taping code T106 T146 Reel size Tape width (mm) (mm) Basic ordering unit.(pcs) hFE rank Marking 180 8 3000 RS T 180 8 3000 RS T www.ro.
Silicon Epitaxial Planar Transistor FEATURES Excellent hFE linearity. Power dissipation:PCM=200mW Pb Lead-free Pr.
SMD Type High-voltage Amplifier Transistor 2SC4102 Transistors Features High breakdown voltage.(VCEO = 120V) 1 Emitte.
2SC4102 TRANSISTOR (NPN) FEATURES High Breakdown Voltage Complements the 2SA1579 MAXIMUM RATINGS (Ta=25℃ unless othe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC4100 |
ROHM |
NPN Silicon Transistor | |
2 | 2SC4102W |
Galaxy Semi-Conductor |
Silicon Epitaxial Planar Transistor | |
3 | 2SC4104 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
4 | 2SC4104 |
Kexin |
NPN Epitaxial Planar Silicon Transistor | |
5 | 2SC4105 |
INCHANGE |
NPN Transistor | |
6 | 2SC4105 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
7 | 2SC4105 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SC4106 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
9 | 2SC4106 |
INCHANGE |
NPN Transistor | |
10 | 2SC4106 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC4107 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
12 | 2SC4107 |
INCHANGE |
NPN Transistor |