2SC3752 - INCHANGE

2SC3752 NPN Transistor

·High Breakdown Voltage and High Reliability ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-.

Features

Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A IC= 1.5A; IB= 0.3A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.2A ; VCE= 5V hFE-2 DC Current Gain IC= 1A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.2A ; VCE= 10V COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 2A , IB1= 0.4A.