2SC3757 - Panasonic Semiconductor

2SC3757 Silicon NPN Transistor

Transistors 2SC3757 Silicon NPN epitaxial planar type For high-speed switching Unit: mm ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and au- 0.40+–00..0150 3 0.16+–00..0160 0.4±0.2 1.50–+00..0255 2.8–+00..32 tomatic insertion through the tape packing and the magazine packing .

Features

• Low collector-emitter saturation voltage VCE(sat)
• Mini type package, allowing downsizing of the equipment and au- 0.40+
  –00..0150 3 0.16+
  –00..0160 0.4±0.2 1.50
  –+00..0255 2.8
  –+00..32 tomatic insertion through the tape packing and the magazine packing 1 2 (0.95) (0.95) 5˚ (0.65) 1.9±0.1 /
■ Absolute Maximum Ratings Ta = 25°C 2.90+
  –00..0250 10˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 40 V c e. d ty Collector-emitter voltage (E-B short) VCES 40 V n d stag tinue Emitter-base voltage (Collector open) VEBO 5 0 to 0.1 1.1
  –+00..12 1.1
  –+.