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·With TO-3PN package ·High voltage ,high speed ·High reliability APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER.
Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA ; IB=0 IC=5A ;IB=1A IC=5A ;IB=1A VCB=500V; IE=0 VCE=900V; RBE=0 VEB=5V; IC=0 IC=1A ; VCE=5V 8 MIN 500 2SC3637 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICES IEBO hFE TYP. MAX UNIT V 2.0 1.5 10 0.5 1.0 V V µA mA mA Switching times ts tf Storage time Fall time 3.0 0.1 0.2 µs µs VCC=200V;IC=5A; IB1=1A; IB2=-2A 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3637 Fig.2 outline dim.
2SC3637 - Sanyo Semicon Device
Ordering number:EN1615C NPN Triple Diffused Planar Silicon Transistor 2SC3637 Ultrahigh-Definition CRT Display Horizont.
2SC3637 - Inchange Semiconductor
·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·M.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3630 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 2 | 2SC3631 |
NEC |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR |
|
| 3 | 2SC3631-Z |
NEC |
NPN Transistor |
|
| 4 | 2SC3631-Z |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC3631-Z |
Renesas |
SILICON POWER TRANSISTOR |
|
| 6 | 2SC3632 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC3632-Z |
NEC |
NPN Transistor |
|
| 8 | 2SC3632-Z |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC3632-Z |
Guangdong Kexin |
NPN Transistor |
|
| 10 | 2SC3632-Z |
Renesas |
SILICON POWER TRANSISTOR |
|
| 11 | 2SC3636 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 12 | 2SC3636 |
SavantIC |
SILICON POWER TRANSISTOR |
|