2SC3631 - NEC

2SC3631 NPN SILICON TRIPLE DIFFUSED TRANSISTOR

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incur.

Features

• High Voltage VCEO = 400 V
• High Speed tf < 0.7 μs
• Complement to 2SA1412-Z Note 5.6 ±0.3 9.5 ±0.5 2.3 ±0.2 0.5 ±0.1 Note 1.0 ±0.5 0.4 MIN. 0.5 TYP. 2.5 ±0.5 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Note 1 Note 2 0.5 ±0.1 0.5 ±0.1 2.3 ±0.3 V V V A A www.DataSheet.co.kr 2.3 ±0.3 VCBO VCEO VEBO IC(DC) IC(pulse) PT Tj Tstg 500 400 7 2.0 4.0 2.0 150 −55 to +150 0.15 ±0.15 TO-252 (MP-3Z) 1. 2. 3. 4. Base Collector Emitter Collector Fin Total Power Dissipa.