Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers ·High-speed inverters ·Converters ·High current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER.
e IC=1mA; IB=0 BVCEO Collector-Emitter Breakdown Voltage IC=10mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.0A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 1.0A; IB= 0.2A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC=0 hFE-1 DC Current Cain IC= 100mA ; VCE= 5V hFE-2 DC Current Cain IC= 1A ; VCE= 5V MIN TYP. MAX UNIT 500 V 400 V 1.0 V 1.5 V 10 μA 10 μA 40 120 6 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contai.
2SC3631-Z - Renesas
of circuits, software and other related information in this document are provided only to illustrate the operation of s.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3631 |
NEC |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR |
|
| 2 | 2SC3630 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 3 | 2SC3632 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC3632-Z |
NEC |
NPN Transistor |
|
| 5 | 2SC3632-Z |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC3632-Z |
Guangdong Kexin |
NPN Transistor |
|
| 7 | 2SC3632-Z |
Renesas |
SILICON POWER TRANSISTOR |
|
| 8 | 2SC3636 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 9 | 2SC3636 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC3636 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 11 | 2SC3637 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 12 | 2SC3637 |
SavantIC |
SILICON POWER TRANSISTOR |
|
