2SC3637 Inchange Semiconductor Silicon NPN Power Transistors Datasheet, en stock, prix

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2SC3637

Inchange Semiconductor
2SC3637
2SC3637 2SC3637
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Part Number 2SC3637
Manufacturer Inchange Semiconductor
Description ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio...
Features B = 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 500V; IE= 0 ICES Collector Cutoff Current VCE= 900V; RBE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V Switching Times tstg Storage Time tf Fall Time IC= 5A, IB1= 1A; IB2= -2A 2SC3637 MIN TYP. MAX UNIT 500 V 2.0 V 1.5 V 10 μA 0.5 mA 1 mA 8 3.0 μs 0.2 μs Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification...

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