2SC3582 Inchange Semiconductor Silicon NPN RF Transistor Datasheet, en stock, prix

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2SC3582

Inchange Semiconductor
2SC3582
2SC3582 2SC3582
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Part Number 2SC3582
Manufacturer Inchange Semiconductor
Description ·Low Noise Figure, High Gain, and High Current Capability Achieve a Very Wide Dynamic Range and Excellent Linearity. ·Low Noise and High Gain NF = 1.2 dB TYP. @f = 1.0 GHz Ga = 12 dB TYP. @f = 1.0 GHz...
Features OL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 10V; IE= 0 IEBO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 8V fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 8V Cre Feed-Back Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz ︱S21e︱2 Insertion Power Gain IC= 20mA ; VCE= 8V;f= 1.0GHz MAG Maximum Available Gain IC= 20mA ; VCE= 8V;f= 1.0GHz NF Noise Figure IC= 7mA ; VCE= 8V;f= 1.0GHz MIN TYP. MAX UNIT 1.0 μA 1.0 μA 50 250 8 GHz 0.4 0.9 pF 9 11 dB 13 dB 1.2 2.5 dB
 hFE Classification Class K Marking K hFE 50-250 isc webs...

Document Datasheet 2SC3582 Data Sheet
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