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·With TO-3PN package ·High breakdown voltage ·Fast switching speed APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Col.
ation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA ;IB=0 IE=1mA ;IC=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCB=800V; IE=0 VEB=4V; IC=0 IC=0.3A ; VCE=5V 15 MIN 500 6 5.0 1.5 10 10 TYP. MAX UNIT V V V V µA µA SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3387 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 .
2SC3387 - INCHANGE
·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3380 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused Transistor |
|
| 2 | 2SC3380 |
Renesas |
Silicon NPN Triple Diffused Transistor |
|
| 3 | 2SC3380 |
TY Semiconductor |
Transistor |
|
| 4 | 2SC3381 |
Toshiba Semiconductor |
NPN Transistor |
|
| 5 | 2SC3382 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SC3383 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 7 | 2SC3388 |
Inchange Semiconductor |
Power Transistor |
|
| 8 | 2SC3300 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC3300 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC3301 |
Toshiba |
Silicon NPN Transistor |
|
| 11 | 2SC3302 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SC3303 |
SeCoS |
NPN Epitaxial Planar Silicon Transistor |
|