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Ordering number:EN1943A Features · Adoption of FBET process. · AF amp. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp Applications Package Dimensions unit:mm 2003A [2SA1392/2SC3383] ( ) : 2SA1392 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Volta.
· Adoption of FBET process.
· AF amp.
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1392/2SC3383
AF Amp Applications
Package Dimensions
unit:mm 2003A
[2SA1392/2SC3383]
( ) : 2SA1392
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
JEDEC : TO-92 EIAJ : SC-43 SANYO : NF
Conditions
Parameter Collector Cutoff Cur.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3380 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused Transistor |
|
| 2 | 2SC3380 |
Renesas |
Silicon NPN Triple Diffused Transistor |
|
| 3 | 2SC3380 |
TY Semiconductor |
Transistor |
|
| 4 | 2SC3381 |
Toshiba Semiconductor |
NPN Transistor |
|
| 5 | 2SC3382 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SC3387 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC3387 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SC3388 |
Inchange Semiconductor |
Power Transistor |
|
| 9 | 2SC3300 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SC3300 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SC3301 |
Toshiba |
Silicon NPN Transistor |
|
| 12 | 2SC3302 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|