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www.DataSheet.co.kr Ordering number:EN1942A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1391/2SC3382 Low Noise AF Amp Applications Features · Adoption of FBET process. · AF amp. · Low-noise use. Noise Test Circuit Package Dimensions unit:mm 2003A [2SA1391/2SC3382] ( ) : 2SA1391 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collecto.
· Adoption of FBET process.
· AF amp.
· Low-noise use. Noise Test Circuit
Package Dimensions
unit:mm 2003A
[2SA1391/2SC3382]
( ) : 2SA1391
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
JEDEC : TO-92 EIAJ : SC-43 SANYO : NP
B : Base C : Collector E : Emitter
Ratings (
–)60 (
–)50 (
–)6 (
–)200 (
–)400 400 150
–55 to +150
Unit V V V mA mA mW
˚.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3380 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused Transistor |
|
| 2 | 2SC3380 |
Renesas |
Silicon NPN Triple Diffused Transistor |
|
| 3 | 2SC3380 |
TY Semiconductor |
Transistor |
|
| 4 | 2SC3381 |
Toshiba Semiconductor |
NPN Transistor |
|
| 5 | 2SC3383 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SC3387 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC3387 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SC3388 |
Inchange Semiconductor |
Power Transistor |
|
| 9 | 2SC3300 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SC3300 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SC3301 |
Toshiba |
Silicon NPN Transistor |
|
| 12 | 2SC3302 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|