2SC3380 Silicon NPN Triple Diffused REJ03G0713-0300 (Previous ADE-208-1082A) Rev.3.00 Aug.10.2005 Application • High frequency high voltage amplifier • High voltage switch Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 4 Note: Marking is “AS”. *UPAK is a trademark of Renesas.
ector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEO VCE(sat) hFE fT Cob Min 300 300 5 — — 30 — — Typ — — — — — — 80 — Max — — — 1 1.5 200 — 4 Unit V V V µA V MHz pF Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCE = 250 V, RBE = ∞ IC = 20 mA, IB = 2 mA VCE = 20 V, IC = 20 mA VCE = 20 V, IC = 20 mA VCB = 20 V, IE = 0, f = 1 MHz Rev.3.00 Aug 10, 2005 page 2 of 5 Free Datasheet http://www.datasheet4u.com/ 2SC3380 Main Characteristics Maximum.
2SC3380 Silicon NPN Triple Diffused Application • High frequency high voltage amplifier • High voltage switch Outline .
SMD Type Transistors IC Product specification 2SC3380 SOT-89 Unit:mm 1.50 ±0.1 ■ Features ● High frequency high vol.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3381 |
Toshiba Semiconductor |
NPN Transistor | |
2 | 2SC3382 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
3 | 2SC3383 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
4 | 2SC3387 |
INCHANGE |
NPN Transistor | |
5 | 2SC3387 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SC3388 |
Inchange Semiconductor |
Power Transistor | |
7 | 2SC3300 |
INCHANGE |
NPN Transistor | |
8 | 2SC3300 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SC3301 |
Toshiba |
Silicon NPN Transistor | |
10 | 2SC3302 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
11 | 2SC3303 |
SeCoS |
NPN Epitaxial Planar Silicon Transistor | |
12 | 2SC3303 |
Toshiba Semiconductor |
SILICON NPN TRANSISTOR |