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SMD Type Silicon NPN Epitaxial 2SC3326 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 High emitter-base voltage: VEBO = 25 V (min). High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). Low on resistance: RON = 1 (typ.) (IB = 5 mA). +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.0.
1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 Small package. +0.1 0.38-0.1 +0.1 0.97-0.1 High DC current gain: hFE = 200 1200. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 20 25 300 60 150 125 -55 to +125 Unit V V V mA mA mW 0-0.1 www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com SMD Type 2SC3326 Electrical C.
2SC3326 - BLUE ROCKET ELECTRONICS
SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package. / Features VEBO， hFE。 High emitter-base voltage,.
2SC3326 - Toshiba Semiconductor
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications 2SC3326 Unit:.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3320 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 2 | 2SC3320 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC3320 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC3320B |
NELL SEMICONDUCTOR |
Silicon NPN Transistor |
|
| 5 | 2SC3321 |
Fuji |
Power Transistor |
|
| 6 | 2SC3322 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SC3322 |
Hitachi |
Silicon NPN Triple Diffused Transistor |
|
| 8 | 2SC3324 |
Toshiba Semiconductor |
Silicon NPN TRANSISTOR |
|
| 9 | 2SC3324 |
Kexin |
Silicon NPN Epitaxial Transistor |
|
| 10 | 2SC3325 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SC3325 |
Kexin |
Silicon NPN Transistor |
|
| 12 | 2SC3327 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|