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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3325 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications 2SC3325 Unit: mm • Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) • High voltage: VCEO = 50 V (min) • Complementary to 2SA1313 • Small package Absolute Maximu.
f the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Start of commercial production 1982-12 1 2014-03-01 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Collector-emi.
2SC3325 - Kexin
SMD Type Silicon NPN Epitaxial 2SC3325 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3320 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 2 | 2SC3320 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC3320 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC3320B |
NELL SEMICONDUCTOR |
Silicon NPN Transistor |
|
| 5 | 2SC3321 |
Fuji |
Power Transistor |
|
| 6 | 2SC3322 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SC3322 |
Hitachi |
Silicon NPN Triple Diffused Transistor |
|
| 8 | 2SC3324 |
Toshiba Semiconductor |
Silicon NPN TRANSISTOR |
|
| 9 | 2SC3324 |
Kexin |
Silicon NPN Epitaxial Transistor |
|
| 10 | 2SC3326 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SC3326 |
Kexin |
Silicon NPN Transistor |
|
| 12 | 2SC3326 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|