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2SC3322 Silicon NPN Tirple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dis.
= 3 A, IB1 = 0.6 A, IB2 =
–1.5 A, VCC ≅ 250 V
1 1
Emitter to base breakdown voltage Collector cutoff current
V(BR)EBO ICBO ICEO hFE1 hFE2 VCE(sat) VBE(sat) ton tstg tf
7 — — 15 7 — — — — —
— — — — — — — — — —
— 100 100 — — 1.0 1.5 1.0 3.0 1.0
V µA µA
DC current transfer ratio
Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test
IC = 1.5 A, IB = 0.3 A
*
1
2
Free Datasheet http://www.datasheet4u.com/
2SC3322
Maximum Collector Dissipation Curve 120 Collector power dissipation Pc (W)
80
40
0
50 100 Case Te.
2SC3322 - SavantIC
·With TO-3P(I) package ·High voltage ·High speed APPLICATIONS ·High power switching applications PINNING PIN 1 2 3 Base .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3320 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 2 | 2SC3320 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC3320 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC3320B |
NELL SEMICONDUCTOR |
Silicon NPN Transistor |
|
| 5 | 2SC3321 |
Fuji |
Power Transistor |
|
| 6 | 2SC3324 |
Toshiba Semiconductor |
Silicon NPN TRANSISTOR |
|
| 7 | 2SC3324 |
Kexin |
Silicon NPN Epitaxial Transistor |
|
| 8 | 2SC3325 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SC3325 |
Kexin |
Silicon NPN Transistor |
|
| 10 | 2SC3326 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SC3326 |
Kexin |
Silicon NPN Transistor |
|
| 12 | 2SC3326 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|