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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3324 2SC3324 Audio Frequency Low Noise Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) • Complementary to 2SA1312 • Small package A.
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 1 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capac.
2SC3324 - Kexin
SMD Type Silicon NPN Epitaxial 2SC3324 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 H.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3320 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 2 | 2SC3320 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC3320 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC3320B |
NELL SEMICONDUCTOR |
Silicon NPN Transistor |
|
| 5 | 2SC3321 |
Fuji |
Power Transistor |
|
| 6 | 2SC3322 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SC3322 |
Hitachi |
Silicon NPN Triple Diffused Transistor |
|
| 8 | 2SC3325 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SC3325 |
Kexin |
Silicon NPN Transistor |
|
| 10 | 2SC3326 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SC3326 |
Kexin |
Silicon NPN Transistor |
|
| 12 | 2SC3326 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|