2SC3317 - INCHANGE

2SC3317 NPN Transistor

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Co.

Features

tage IC= 10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 2A; IB= 0.4A VCB= 500V ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V hFE-2 DC Current Gain IC= 2A ; VCE= 5V Switching times tr Rise Time tstg Storage Time tf Fall Time VCC≈ 200V, RL= 250Ω, IB1= -IB2= 0.08A, MIN MAX UNIT 400 V 500 V 1.0 V 1.5 V 100 μA 1.0 mA 20 10 1.0 μs 2.5 μs 1.0 μs Notic.