2SC3313 - Panasonic Semiconductor

2SC3313 Silicon NPN Transistor

Transistors 2SC3313 Silicon NPN epitaxial planar type For high-frequency amplification 4.0±0.2 2.0±0.2 Unit: mm 15.6±0.5 (0.8) (0.8) 3.0±0.2 7.6 ■ Features • Optimum for high-density mounting • Allowing supply with the radial taping 0.75 max. • Optimum for RF amplification of FM/AM radios / ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Ra.

Features

• Optimum for high-density mounting
• Allowing supply with the radial taping 0.75 max.
• Optimum for RF amplification of FM/AM radios /
■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 V c e. d ty Collector-emitter voltage (Base open) VCEO 20 V n d stag tinue Emitter-base voltage (Collector open) VEBO 5 V a e cle con Collector current IC 30 mA lifecy , dis Collector power dissipation PC 300 mW n u duct typed Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C 0.4.