Transistors 2SC3315 Silicon NPN epitaxial planar type For high-frequency amplification 4.0±0.2 2.0±0.2 Unit: mm 15.6±0.5 (0.8) (0.8) 3.0±0.2 7.6 ■ Features • Optimum for high-density mounting • Allowing supply with the radial taping 0.75 max. • Optimum for RF amplification of FM/AM radios • High transition frequency fT / ■ Absolute Maximum Ratings .
• Optimum for high-density mounting
• Allowing supply with the radial taping
0.75 max.
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
/
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
30
V
c e. d ty Collector-emitter voltage (Base open) VCEO
20
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
3
V
a e cle con Collector current
IC
15
mA
lifecy , dis Collector power dissipation
PC
300
mW
n u duct typed Junction temperature
Tj
150
°C
te tin Pro ed Storage temper.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3310 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | 2SC3310 |
Toshiba |
Silicon NPN Transistor | |
3 | 2SC3310 |
INCHANGE |
NPN Transistor | |
4 | 2SC3311 |
Panasonic |
Silicon NPN Transistor | |
5 | 2SC3311A |
Panasonic Semiconductor |
Silicon NPN Transistor | |
6 | 2SC3312 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
7 | 2SC3313 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
8 | 2SC3314 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
9 | 2SC3317 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SC3317 |
INCHANGE |
NPN Transistor | |
11 | 2SC3318 |
Fuji Electric |
Transistor | |
12 | 2SC3318 |
SavantIC |
SILICON POWER TRANSISTOR |