2SC3314 - Panasonic Semiconductor

2SC3314 Silicon NPN Transistor

Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1323 Unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s Features q q q q Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking +0.2 0.45–0.1 15.6±0.5 s Absolut.

Features

q q q q Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking +0.2 0.45
  –0.1 15.6±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25˚C) Ratings 30 20 5 30 300 150
  –55 ~ +150 Unit V V V mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.54±0.15 EIAJ:SC
  –72 New S Type Package s El.