·High Current-Gain Bandwidth Product ·Small Output Capacitance APPLICATIONS ·Designed for high-frequency amplification, oscillation, mixing applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Po.
age IC= 20mA ; IB= 4mA
ICBO Collector Cutoff Current
VCB= 10V; IE= 0
10 V 0.5 V 1 μA
hFE DC Current Gain
IC= 5mA ; VCE= 4V
75 400
fT
Current-Gain—Bandwidth Product
IE= -5mA ; VCB= 4V; f= 200MHz 1.4 1.9 2.5 GHz
COB Output Capacitance
IE= 0 ; VCB= 4V; f= 1MHz
1.4 pF
rbb’
• CC Base Time Constant Cre Feed-Back Capacitance
IE= -5mA ; VCB= 4V; f= 31.9MHz IE= 0 ; VCB= 4V; f= 1.0MHz
11 0.45
ps pF
hFE Classification
Class
P
Marking
ISP
hFE 75-130
Q ISQ 110-220
R ISR 200-400
isc website:www.iscsemi.cn
2
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Spe.
Transistors 2SC3130 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing ■ Features •.
SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package. / Features fT ,。 High fT, small Cob and small C.
SMD Type Transistors NPN Transistors 2SC3130 ■ Features ● Collector Current Capability IC=50mA ● Collector Emitter Vol.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC313 |
New Jersey Semi-Conductor |
Silicon NPN Transistor | |
2 | 2SC3133 |
Mitsubishi Electric Semiconductor |
NPN Transistor | |
3 | 2SC3133 |
ASI |
NPN SILICON RF POWER TRANSISTOR | |
4 | 2SC3134 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
5 | 2SC3134 |
Kexin |
NPN Epitaxial Planar Silicon Transistor | |
6 | 2SC3135 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
7 | 2SC3136 |
Toshiba |
Silicon NPN Transistor | |
8 | 2SC3137 |
Toshiba |
Silicon NPN Transistor | |
9 | 2SC3138 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
10 | 2SC3138 |
Kexin |
Silicon NPN Transistor | |
11 | 2SC3101 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR | |
12 | 2SC3102 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |