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2SC3130 - Inchange Semiconductor

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2SC3130 Silicon NPN RF Transistor

·High Current-Gain Bandwidth Product ·Small Output Capacitance APPLICATIONS ·Designed for high-frequency amplification, oscillation, mixing applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Po.

Features

age IC= 20mA ; IB= 4mA ICBO Collector Cutoff Current VCB= 10V; IE= 0 10 V 0.5 V 1 μA hFE DC Current Gain IC= 5mA ; VCE= 4V 75 400 fT Current-Gain—Bandwidth Product IE= -5mA ; VCB= 4V; f= 200MHz 1.4 1.9 2.5 GHz COB Output Capacitance IE= 0 ; VCB= 4V; f= 1MHz 1.4 pF rbb’
• CC Base Time Constant Cre Feed-Back Capacitance IE= -5mA ; VCB= 4V; f= 31.9MHz IE= 0 ; VCB= 4V; f= 1.0MHz 11 0.45 ps pF ‹ hFE Classification Class P Marking ISP hFE 75-130 Q ISQ 110-220 R ISR 200-400 isc website:www.iscsemi.cn 2 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Spe.

The same part from a different manufacturer

Datasheet 2SC3130 - Panasonic Semiconductor 2SC3130

Transistors 2SC3130 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing ■ Features •.

Datasheet 2SC3130 - BLUE ROCKET ELECTRONICS 2SC3130

SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.  / Features fT ,。 High fT, small Cob and small C.

Datasheet 2SC3130 - Kexin 2SC3130

SMD Type Transistors NPN Transistors 2SC3130 ■ Features ● Collector Current Capability IC=50mA ● Collector Emitter Vol.

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