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2SC3130 |
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| Part Number | 2SC3130 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Current-Gain Bandwidth Product ·Small Output Capacitance APPLICATIONS ·Designed for high-frequency amplification, oscillation, mixing applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA... |
| Features |
age IC= 20mA ; IB= 4mA
ICBO Collector Cutoff Current
VCB= 10V; IE= 0
10 V 0.5 V 1 μA
hFE DC Current Gain
IC= 5mA ; VCE= 4V
75 400
fT
Current-Gain—Bandwidth Product
IE= -5mA ; VCB= 4V; f= 200MHz 1.4 1.9 2.5 GHz
COB Output Capacitance
IE= 0 ; VCB= 4V; f= 1MHz
1.4 pF
rbb’ • CC Base Time Constant Cre Feed-Back Capacitance IE= -5mA ; VCB= 4V; f= 31.9MHz IE= 0 ; VCB= 4V; f= 1.0MHz 11 0.45 ps pF hFE Classification Class P Marking ISP hFE 75-130 Q ISQ 110-220 R ISR 200-400 isc website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Spe... |
| Document |
 2SC3130 Data Sheet
PDF 137.35KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC313 |
New Jersey Semi-Conductor |
Silicon NPN Transistor |
|
| 2 | 2SC3130 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC3130 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
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| 4 | 2SC3130 |
Kexin |
NPN Transistors |
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| 5 | 2SC3133 |
Mitsubishi Electric Semiconductor |
NPN Transistor |
|