2SC3136 SILICON NPN EPITAXIAL PLANAR TYPE TV VHF MIXER APPLICATIONS. FEATURES . High Conversion Gain : G ce =2 3dB (Typ.) . Low Reverse Transfer Capacit ance : C r e=0.4pF (Typ .) — 5.1 MAX 1- Unit in mm ; 0.45 0.5 5 (145 -n rf ii i 1 4 °- 1 - S 01 c5 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitte.
. High Conversion Gain : G ce =2 3dB (Typ.) . Low Reverse Transfer Capacit ance : C r e=0.4pF (Typ .) — 5.1 MAX 1- Unit in mm ; 0.45 0.5 5 (145 -n rf ii i 1 4 °- 1 - S 01 c5 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range jj 1 SYMBOL VCBO VCEO Vebo ic IB PC TJ T stg RATING 30 20 3 50 25 250 125 -55-125 UNIT V V V mA mA mW °C °C 1.2 7 1- 27 1 t 1- , c! / i ^ - ! Vr " n up at> 1 2i 1. BASE 2. EMITTER Z. .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC313 |
New Jersey Semi-Conductor |
Silicon NPN Transistor | |
2 | 2SC3130 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
3 | 2SC3130 |
Inchange Semiconductor |
Silicon NPN RF Transistor | |
4 | 2SC3130 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
5 | 2SC3130 |
Kexin |
NPN Transistors | |
6 | 2SC3133 |
Mitsubishi Electric Semiconductor |
NPN Transistor | |
7 | 2SC3133 |
ASI |
NPN SILICON RF POWER TRANSISTOR | |
8 | 2SC3134 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
9 | 2SC3134 |
Kexin |
NPN Epitaxial Planar Silicon Transistor | |
10 | 2SC3135 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
11 | 2SC3137 |
Toshiba |
Silicon NPN Transistor | |
12 | 2SC3138 |
Toshiba Semiconductor |
Silicon NPN Transistor |