2SC3138 Silicon NPN Transistor Datasheet

2SC3138 Silicon NPN Transistor

SMD Type Silicon NPN Triple Diffused Type 2SC3138 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 High voltage. VCBO = 200 V (max) VCEO = 200 V (max) Small flat package. +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 P.

Features

1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 200 200 5 50 20 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current .

The same part from a different manufacturer

2SC3138 - Toshiba Semiconductor

2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Amplifier Applications H.

Related Product

No.	Partie #	Fabricant	Description
1	2SC313	New Jersey Semi-Conductor	Silicon NPN Transistor
2	2SC3130	Panasonic Semiconductor	Silicon NPN Transistor
3	2SC3130	Inchange Semiconductor	Silicon NPN RF Transistor
4	2SC3130	BLUE ROCKET ELECTRONICS	Silicon NPN transistor
5	2SC3130	Kexin	NPN Transistors
6	2SC3133	Mitsubishi Electric Semiconductor	NPN Transistor
7	2SC3133	ASI	NPN SILICON RF POWER TRANSISTOR
8	2SC3134	Sanyo Semicon Device	PNP/NPN Epitaxial Planar Silicon Transistors
9	2SC3134	Kexin	NPN Epitaxial Planar Silicon Transistor
10	2SC3135	Sanyo Semicon Device	PNP/NPN Epitaxial Planar Silicon Transistors
11	2SC3136	Toshiba	Silicon NPN Transistor
12	2SC3137	Toshiba	Silicon NPN Transistor

2SC3138 - Kexin