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2SC3052 - Kexin

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2SC3052 NPN Transistor

SMD Type NPN Transistor 2SC3052 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 Collector current :IC=0.2A Power dissipation :PC=0.15W +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Coll.

Features

+0.1 2.4-0.1 Collector current :IC=0.2A Power dissipation :PC=0.15W +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current power dissipation
* Junction temperature Storage temperature
* . 0.7 mmx16 cm ceramic substrate 2 Symbol VCBO VCEO VEBO IC Pc Tj Tstg Rating 50 50 6 200 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Colle.

The same part from a different manufacturer

Datasheet 2SC3052 - SeCoS 2SC3052

2SC3052 Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor A suffix of "-C" specifies halogen & lead.

Datasheet 2SC3052 - Jiangsu Changjiang 2SC3052

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC3052 FEATURES Power dis.

Datasheet 2SC3052 - Jin Yu Semiconductor 2SC3052

2SC3052 TRANSISTOR (NPN) FEATURES z SOT-23 z Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,.

Datasheet 2SC3052 - GME 2SC3052

Production specification Silicon Epitaxial Planar Transistor FEATURES  Low collector to emitter saturation voltage. .

Datasheet 2SC3052 - Rectron 2SC3052

only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in differ.

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