SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES . Excellent Switching Times : t r=1.0/is(Max.), tf=1.5/*s(Max. ) at Ic=0.5A . High Collector Breakdown Voltage : Vceo= 400V 7.9 MAX. , Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Vo.
. Excellent Switching Times
: t r=1.0/is(Max.), tf=1.5/
*s(Max. ) at Ic=0.5A . High Collector Breakdown Voltage : Vceo= 400V
7.9 MAX.
,
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
VCBO VcEO VEBO
Collector Current
DC Pulse
ic ICP
Base Current
IB
Collector Power Dissipation
Ta=25 C Tc=25°C
Junction Temperature
Storage Temperature Range
L stg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Em.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3052 |
GME |
Silicon Epitaxial Planar Transistor | |
2 | 2SC3052 |
Jiangsu Changjiang |
TRANSISTOR | |
3 | 2SC3052 |
Kexin |
NPN Transistor | |
4 | 2SC3052 |
SeCoS |
NPN Silicon Plastic-Encapsulate Transistor | |
5 | 2SC3052 |
Rectron |
BIPOLAR TRANSISTORS TRANSISTOR | |
6 | 2SC3052 |
Jin Yu Semiconductor |
TRANSISTOR | |
7 | 2SC3052-T150 |
Isahaya Electronics |
SILICON NPN EPITAXIAL TYPE TRANSISTOR | |
8 | 2SC3053 |
Isahaya Electronics |
Silicon NPN Epitaxial Type Transistor | |
9 | 2SC3055 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SC3055 |
INCHANGE |
NPN Transistor | |
11 | 2SC3058 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SC3058 |
INCHANGE |
NPN Transistor |