Ordering number:EN866C Features · FBET series. · High fT and small Cre. NPN Epitaxial Planar Silicon Transistor 2SC3000 HF Amplifier Applications Package Dimensions unit:mm 2003A [2SC3000] JEDEC : TO-92 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-B.
· FBET series.
· High fT and small Cre.
NPN Epitaxial Planar Silicon Transistor
2SC3000
HF Amplifier Applications
Package Dimensions
unit:mm 2003A
[2SC3000]
JEDEC : TO-92 EIAJ : SC-43
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature
VCBO VCEO VEBO
IC PC Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gai.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3001 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR | |
2 | 2SC3006 |
Toshiba Semiconductor |
Silicon NPN epitaxial planer type Transistor | |
3 | 2SC3007 |
Toshiba |
Silicon NPN Transistor | |
4 | 2SC3011 |
Toshiba Semiconductor |
Silicon NPN epitaxial planer Transistor | |
5 | 2SC3011 |
Kexin |
Silicon NPN Epitaxial Transistor | |
6 | 2SC3012 |
INCHANGE |
NPN Transistor | |
7 | 2SC3012 |
SavantIC |
Silicon power Transistor | |
8 | 2SC3017 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR | |
9 | 2SC3018 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR | |
10 | 2SC3019 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR | |
11 | 2SC3020 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR | |
12 | 2SC3021 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |