2SC3052 is a mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. FEATURE ●Small collector to emitter saturation voltage. VCE(sat)=0.3V max(@IC=100mA/IB=10mA) ●Excellent linearity of DC forward current gain. ●Super mini package for easy mounting 2.8 1.90 0.95 0.95 0.4 2SC3052-T150 FOR LOW FREQUE.
milar to TO-236 MARKING LF Type name hFE Item ELECTRICAL CHARACTERISTICS(Ta=25℃) Parameter Symbol Test conditions C to E breakdown voltage Collector cut off current Emitter cut off current DC forward current gain ※ DC forward current gain C to E Saturation voltage B to E Saturation voltage Gain bandwidth product Collector output capacitance Noise figure V(BR)CEO ICBO IEBO hFE hFE VCE(sat) VBE(sat) fT Cob NF I C=100μA ,R BE=∞ V CB=50V, I E=0mA V EB=6V, I C=0mA V CE=6V, I C=1mA V CE=6V, I C=0.1mA I C=100mA ,IB=10mA I C=100mA ,IB=10mA V CE=6V, I E=-10mA V CB=6V, I E=0,f=1MHz V CE=6V, I .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3052 |
GME |
Silicon Epitaxial Planar Transistor | |
2 | 2SC3052 |
Jiangsu Changjiang |
TRANSISTOR | |
3 | 2SC3052 |
Kexin |
NPN Transistor | |
4 | 2SC3052 |
SeCoS |
NPN Silicon Plastic-Encapsulate Transistor | |
5 | 2SC3052 |
Rectron |
BIPOLAR TRANSISTORS TRANSISTOR | |
6 | 2SC3052 |
Jin Yu Semiconductor |
TRANSISTOR | |
7 | 2SC3051 |
Toshiba |
Silicon NPN Transistor | |
8 | 2SC3053 |
Isahaya Electronics |
Silicon NPN Epitaxial Type Transistor | |
9 | 2SC3055 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SC3055 |
INCHANGE |
NPN Transistor | |
11 | 2SC3058 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SC3058 |
INCHANGE |
NPN Transistor |